ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 degrees C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 degrees C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 degrees C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 degrees C was blue shifted by 2 nm compared to those grown at 600 degrees C. This shift could be attributed to surface effect. (c) 2009 Elsevier B.V. All rights reserved.