Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures

Wong S; Kiowski O; Kappes M; Lindner JKN; Mandal N; Peiris FC; Ozin GA; Thiel M; Braun M; Wegener M; von Freymann G

Advanced Materials, Vol.20, No.21, 4097-4097, 2008

DOI10.1002/adma.200801508 Export Citation

Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures

Wong S, Kiowski O, Kappes M, Lindner JKN, Mandal N, Peiris FC, Ozin GA, Thiel M, Braun M, Wegener M, von Freymann G

A 3D direct laser writing (3D DLW) compatible photoresist, consisting of erbium-doped arsenic trisulfide (Er:AS(2)S(3)) has been developed. This photoresist simultaneously possess a refractive index (n) of 2.45 and photoluminescence at 1.5 mu m wavelength that is also spatially localizable. This enables 3D DLW to produce high-refractive index photonic structures with spatially selective optical activity without the need for post-processing steps.