화학공학소재연구정보센터
Advanced Materials, Vol.20, No.17, 3289-3289, 2008
Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors
Graphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.