초임계이산화탄소 내에서 공용매 및 초음파를 이용한 고농도 이온주입 포토레지스트의 제거

김승호; 임권택; Seung Ho Kim; Kwon Taek Lim

Clean Technology, Vol.15, No.2, 69-74, June, 2009

Export Citation

초임계이산화탄소 내에서 공용매 및 초음파를 이용한 고농도 이온주입 포토레지스트의 제거

Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide

김승호, 임권택 ^†

부경대학교 화상정보공학부, 608-739 부산광역시 남구 용당동 산100

Seung Ho Kim, and Kwon Taek Lim^†

Divison of Image and Information Engineering, Pukyung National University, San 100, Yongdang-dong, Nam-gu， Busan 608-739, Korea

E-mail:

초록

초임계이산화탄소와 공용매의 혼합물을 사용하여 반도체 웨이퍼 기판으로부터 고농도이온주입 포토레지스트(HDIPR)를 제거하였다. 또한 고압 셀 내부에 초음파 장치를 부착하여 웨이펴 표면에 물리적 힘을 제공함으로서 세정용액의 HDIPR에 대한 스트리핑 성능을 현저히 향상시키고, 제거 시간을 단축시켰다. 공용매의 종류 및 농도, 공정 온도, 압력 변화에 따른 HDIPR 스트리핑 특성을 조사하였으며, 웨이퍼 표면의 제거 전후의 상태 및 성분을 scanning electron microscopy 과 energy dispersive X-ray spectrometer를 이용하여 분석하였다 10 w/w% 함량의 아세톤 공용매를 이용하여 공정압력 27.6 MPa과 온도 343 K 의 조건에서 3분의 초음파 처리시간을 거쳐 HDIPR을 완전히 제거할 수 있었다.

A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/scCO2 mixture at 27.6 MPa and 343 K.

Keywords:Photoresist;Stripping;Supercritical carbon dioxide;Ultrasonication

[References]

Hong HP, Kim TH, Hong HP, "Photoresist Stripper Composition and Exfoliation Method of a Photoresist Using It," K.R. Patent No. 2006-0121992 (2006)
Oh GJ, "Method for Cleaning Photoresist Mask Residue," K.R. Patent No. 2005-0036180 (2005)
Souvik B, Ramesh B, Raghavan S, Cross P, U.S. Patent No. 2005-255695 (2005)
Souvik B, Ramesh B, Masanobu S, Sadao H, Semicon Japan 2005, Dec. 7, Chiba, Japan (2005)
Nagal N, lmai T, Tereda K, Seki H, Okumura H, Fujino H, Yamamoto T, Nishuyama I, Hatta A, Surf. Interface Anal., 34, 545 (2002)
Rothman LB, Robey RJ, Ali MK, Mount DJ, Sematech Wafer Clean and Surface Rreparation Workshop, May 21, Austin, TX (2002)
Danel A, Millet C, Perrot V, Daviot J, Rignon M, Tardif F, Abs. 795, 204th Meeting of the Electrochemical, Society, Oct. 12, Orlando, FL (2003)
Saga K, Kuniyasu H, Hattori T, Korzenski MB, Visintin PM, Baum TH, Abs. 787, 208th Meeting of the Electrochemical Society, Oct. 16, Los Angeles, CA (2005)
Kim SH, Kim JH, Lim KT, J. Soc. Imag. Sci. Tech., 13, 285 (2007)
Kim SH, Yuvaraj H, Jeong YT, Park C, Kim SW, Lim KT, Microelectron. Eng., 86, 171 (2009)

[Referenced By]

[Related Articles]

[1] Hong HP, Kim TH, Hong HP, "Photoresist Stripper Composition and Exfoliation Method of a Photoresist Using It," K.R. Patent No. 2006-0121992 (2006)

[2] Oh GJ, "Method for Cleaning Photoresist Mask Residue," K.R. Patent No. 2005-0036180 (2005)

[3] Souvik B, Ramesh B, Raghavan S, Cross P, U.S. Patent No. 2005-255695 (2005)

[4] Souvik B, Ramesh B, Masanobu S, Sadao H, Semicon Japan 2005, Dec. 7, Chiba, Japan (2005)

[5] Nagal N, lmai T, Tereda K, Seki H, Okumura H, Fujino H, Yamamoto T, Nishuyama I, Hatta A, Surf. Interface Anal., 34, 545 (2002)

[6] Rothman LB, Robey RJ, Ali MK, Mount DJ, Sematech Wafer Clean and Surface Rreparation Workshop, May 21, Austin, TX (2002)

[7] Danel A, Millet C, Perrot V, Daviot J, Rignon M, Tardif F, Abs. 795, 204th Meeting of the Electrochemical, Society, Oct. 12, Orlando, FL (2003)

[8] Saga K, Kuniyasu H, Hattori T, Korzenski MB, Visintin PM, Baum TH, Abs. 787, 208th Meeting of the Electrochemical Society, Oct. 16, Los Angeles, CA (2005)

[9] Kim SH, Kim JH, Lim KT, J. Soc. Imag. Sci. Tech., 13, 285 (2007)

[10] Kim SH, Yuvaraj H, Jeong YT, Park C, Kim SW, Lim KT, Microelectron. Eng., 86, 171 (2009)