Thick GaN films, with (112 0) or (112 6) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using A1N or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (112 0) non-polar GaN (a-GaN) films. {112 0} and {10 10} prismatic-plane and (110 2} pyramidal-plane stacking faults (SFs) were observed to terminate some BSFs. The SI's on (10 1 0} and {110 2} planes generally formed closed domains. For (112 6) semi-polar GaN (s-GaN) films, most threading dislocations were located at small-angle grain boundaries. Many BSFs were observed close to the A1N/GaN interface but, in comparison with a-GaN, the s-GaN films had much lower BSF density at the top surface. Inversion domain boundaries (IDBs) on {1010} planes were observed to form closed domains. GaN/AlGaN multiple quantum wells (MQWs) grown on s-GaN or a-GaN followed the morphology of the GaN surface. Some IDBs in the s-GaN propagated through the GaN/AlGaN MQWs to the top surface. Published by Elsevier B.V.