The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs1-y-zSbyNz/InP multiquantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs1-ySby layers was observed when using a higher Sb/(As+Sb) precursor ratio and higher growth temperature. However, lattice-latching effects and the strain values ultimately limit the maximum amount of Sb incorporated. In GaAs1-y-zSbyNz layers, a decrease of AsH3 precursor flux leads to an increase of N and Sb incorporation, whereas an increase of unsymmetrical dimethylhydrazine (U-DMHy) precursor flux leads to an increase of N and a decrease of Sb incorporation. The photo luminescence emission from the GaAs1-y-zSbyNz QW is observed to red-shift with decreasing AsH3 and increasing U-DMHy flux. Sb accumulation at the InP to GaAs1-x-y-zSbyNz interface is also observed from secondary ion mass spectroscopy analysis, indicating further optimization of switching sequences is required to improve the compositional uniformity of the QW. (C) 2007 Elsevier B.V. All rights reserved.