Strain-compensated AlGaInAs quantum wells/barriers were grown by OMVPE on InP substrates of different orientations: (10 0), (1 0 0) 3 degrees miscut toward (1 1 1)(A), (5 1 0)(A) and (5 1 1)(B), (3 1 1)(A) and (3 1 1)(B), Smooth surfaces and narrow photoluminescence lines were obtained on (1 0 0) and (3 1 1)(B) even for the highest compressive strain tested, + 2%. Under high growth rate, (5 1 1)(A) was found to yield the roughest surfaces and widest photoluminescence lines. When growth pauses were inserted in the quantum wells, (5 1 1)(A), (5 1 1)(B), and (1 0 0) 3 degrees miscut toward (1 1 1)(A) showed very rough surfaces. (C) 2007 Elsevier B.V. All rights reserved.