Journal of Crystal Growth, Vol.310, No.7-9, 1691-1696, 2008
Phase, nucleation and coalescence of HgI2 onto amorphous substrates
Heterogeneous nucleation and further growth of HgI2 onto glass were studied by the physical vapor deposition (PVD) method, with and without an argon atmosphere. Glass substrates 2" x 2" in area were used for nucleation and growth. Supersaturation strongly determined not only the nuclei population and size, but also the HgI2 nucleation phase. A range of nucleation-growth temperatures between 303 and 333 K for the substrate, and a range of initial argon pressure between 1.3 and 2.6 x 10(4) Pa were found appropriate for nucleation and growth in the alpha (red) phase of HgI2. Other conditions, such as an argon pressure higher than 4 x 10(4) Pa, determined the nucleation and growth in the beta (yellow) metastable phase. After a nucleation growth time of 30 min, clusters of about 0.5 mu m for beta-HgI2 and 1 mu m for alpha-HgI2 and a minimum distance between the clusters of about 1 and 10 mu m were, respectively, obtained. Coalescence was performed by annealing the clusters at a temperature between 303 and 333K and from 5 min to 24h, at an initial argon pressure of 10(4) Pa. They coalesced to form larger clusters, which, in the case of the beta-phase also transformed to the alpha-stable phase. From the experimental nucleation-growth and further coalescence conditions, correlations between supersaturation conditions and phase were established. Also, considerations about interface free energies and nucleation phase were made. Future work will be conducted to diminish nuclei size and enlarge nuclei population, seeking for early stages of nucleation. (C) 2007 Elsevier B.V. All rights reserved.
Keywords:nucleation;graphoepitaxy;physical vapor deposition processes;semiconducting mercury compounds