In the present investigation, a perovskite LaNiO3 (LNO) buffer layer was employed to grow Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O-3 (PLZST 2/88/10/2) antiferroelectric thin films at lower temperature using the sot-gel method. X-ray diffractometer (XRD) results indicated that PLZST 2/88/10/2 antiferroelectric thin films with (1 1 0)-preferred orientation were crystallized fully after being annealed at a lower temperature of 450 degrees C. The surface micrograph illustrated that the grain size of PLZST 2/88/10/2 anti ferroelectric thin films was heavily dependent on the final heat-treatment temperature. The polarization-field (P-E) and dielectric constant-field (epsilon-E) measurements demonstrated that PUST 2/88/10/2 thin films displayed favorable electrical properties after going through a heat treatment at 500 degrees C for 1 h. (C) 2007 Elsevier B.V. All rights reserved.