Advanced Functional Materials, Vol.18, No.5, 777-784, 2008
Magnetism and phase formation in the candidate dilute magnetic semiconductor system In2-xCrxO3: Bulk materials are dilute paramagnets
Well-characterized bulk materials in the candidate dilute magnetic semiconductor system In2-xCrxO3 are prepared for 0 <= x <= 0.15, with cation site preferences in the bixbyite structure identified by diffraction methods. Small ferromagnetic moments are observed; their size (<10(-2) mu(B)/dopant ion) is not consistent with bulk ferromagnetism. The resulting bulk materials display dilute paramagnetic behaviour, with all of the moment expected per Cr3+ cation dopant being involved in this paramagnetic response.