Highly conducting boron-doped ZnO thin films have been grown at low temperature (200 degrees C) by plasma enhanced chemical vapor deposition using diethyl zinc [Zn(C2H5)(2)], carbon dioxide (CO2), triethylboron, and argon gas mixtures. The minimum resistivity is < 4 x 10(-4) Omega cm with an excellent optical transmission (> 85% for the visible spectrum ). The free-electron concentration, determined by Hall effect measurement, was as high as 1 x 10(21)/cm(3) with a mobility of 13.5 cm(2)/V s. For this deposition approach, the low-reactivity oxidant CO2 allows a uniform film growth over a large area, and the low-toxicity triethylboron allows a simple and convenient boron doping. (c) 2008 The Electrochemical Society.