Alq(3) thin layers were vapor deposited onto a single crystal of Si( 1 1 1) and the morphology of the surface was investigated by the scanning tunneling microscope under ultrahigh vacuum conditions. The STM imaging showed considerable influence of the thermal processing onto the topography of the sample. Slowly raising the sample temperature to similar to 160 degrees C caused a complete desorption of Alq(3) molecules and uncovering the clean surface of Si( 1 1 1). A fast rise of the temperature ( flashing) to similar to 600 degrees C led to decomposition of the Alq(3) and resulted in remnants of a carbon-rich surface species. Then heating or flashing this surface to a temperature in excess of 1000 degrees C brought about the occurrence of regular shape object on the Si( 1 1 1) surface. (c) 2008 Elsevier B. V. All rights reserved.