Applied Surface Science, Vol.254, No.14, 4313-4317, 2008
Photoelectron diffraction effect in the highly ordered Si(557)/Pb surface
The electronic structure of vicinal Si( 5 5 7) surface covered with 2 ML Pb, ordered after annealing at 640 K as found previously [ C. Tegenkamp, Z. Kallassy, H.- L. Gunter, V. Zielasek, H. Pfnur, Eur. Phys. J. B 43 ( 2005) 557; C. Tegenkamp, Z. Kallassy, H. Pfnur, H.- L. Gunter, V. Zielasek, M. Henzler, Phys. Rev. Lett. 95 ( 2005) 176804], is studied with angle-resolved photoemission spectroscopy ( ARPES) at a temperature of 130 K. The spectra show a superposition of Pb-induced electronic surface states and the Si( 1 1 1) bulk band states. The observed splitting of a Si bulk band suggests photoelectron diffraction on the one-dimensional grid of the vicinal surface. (c) 2008 Elsevier B. V. All rights reserved.