The presented work describes behavior of contact structures of Ni/Ti type on 6H-SiC n-type. The best contact resistivity obtained is 3.3 x 10(-4) Omega cm(2). The structure showed excellent thermal stability, it was stable after being tested for 10 h at 900 degrees C. XRD analysis after annealing at 960 degrees C revealed orthorhombic Ni2Si as the dominate phase. (c) 2007 Elsevier B.V. All rights reserved.