Thin Solid Films, Vol.516, No.10, 3162-3166, 2008
Dielectric and microstructural properties of barium titanate hafhate thin films
Barium titanate hafnate (BaTi1-x,HfxO3, 0 <= x <= 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 degrees C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior. (c) 2007 Elsevier B.V. All rights reserved.