TiO2 thin films prepared by Hot-Wire CVD method have been studied as a protecting material of transparent conducting oxide (TCO) against atomic hydrogen exposures for the fabrications of Si thin film solar cells. It was found that electrical conductivity of the films at room temperature reached a value of 0.4 S/cm. This value is 2-3 orders of magnitude higher than that of TiO2 films prepared by RF magnetron sputtering and electron-beam evaporation methods in our previous works. The conductivity improvement seems to be partly due to the enlargement of TiO2 crystallites. (c) 2007 Elsevier B.V. All rights reserved.