Thin Solid Films, Vol.516, No.5, 743-746, 2008
Recent advances in hot-wire CVD R&D at NREL: From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures
Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved I I gm of epitaxial growth at a rate of 110 nm/min. Published by Elsevier B.V.
Keywords:heterojunctions;solar cells;epitaxial growth;silicon;hot-wire deposition;crystallization;efficiency;passivation