The electrical characteristics of Gd2O3-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (GaAs) metal- oxide semiconductor capacitors with different Gd2O3 and HfO2 thicknesses are investigated. A top Gd2O3 with bottom HfO2 bilayer dielectric shows excellent capacitance-voltage (C-V) characteristics and the lowest hysteresis. Scaling down of this Gd2O3/HfO2 dielectric results in substantial reduction in hysteresis compared to HfO2 without significant change in equivalent oxide thickness. A qualitative explanation of reduced hysteresis with an electric field model is presented. (C) 2008 American Vacuum Society.