Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system are fundamentally important from the viewpoint of device performance. We study interface electronic structure of iron thin film deposited on silicon (Si)- and carbon (C)-face of 4H-SiC(0 0 0 1) by using a soft X-ray emission spectroscopy (SXES). For specimens of Fe (50 nm)/4H-SiC (substrate) contact systems annealed at 700 and 900 degrees C, the Si L-2,L-3 emission spectra indicate different shapes and peak energies from the substrate depending on thermal-treated temperature. The product of materials such as silicides is suggested. Further, from comparison of Si L-2,L-3 emission spectra between Si- and C-face for the same annealing temperature at 700 degrees C, it is concluded that the similar silicides and/or ternary materials are formed on the two surfaces. However for those of 900 degrees C, the film on substrate is composed of the different silicide and/or ternary materials. (C) 2007 Elsevier B.V. All rights reserved.