This article reported on fabrication and characterization for 1.3 mu m AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index-coupled distribution feedback laser diodes with low threshold current density, high output power, wide modulation bandwidth and narrow emission linewidth by metalorganic chemical vapor deposition. A grating layer composed of undoped GaInAsP (lambda(g) = 1.1 mu m) layer was made of holographic technology, and used to modulate the lasing wavelength for single mode emission. The 3.5 mu m ridge-stripe and 300 mu m cavity LDs without facet coating exhibits the excellent performances, including a threshold current of 11 mA, a slope efficiency of 0.25 W/A, a characteristic temperature of 80 K in 20-80 degrees C, a relaxation frequency response of 9.24 GHz, and a narrow full width at half maximum of 0.31 nm. The side mode suppression ratio is about 50 dB for AR/HR facet coating under 60 mA bias current. (c) 2007 Elsevier Ltd. All rights reserved.