Accurate threshold voltage (V-T) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing VT models cannot model the impact of source/drain junction depth on V-T rolloff. A new model is proposed that can accurately model bulk-MOSFET VT including the source/drain junction depth. The model also provides a scale-length that can be used to rapidly predict the minimum channel-length for a given set of technology parameters. (c) 2007 Elsevier Ltd. All rights reserved.