We have investigated a short channel (L:5 I gm) effect on the electrical reliability of the low temperature poly-Si thin film transistors (TFT) on a glass substrate. The threshold voltage of the p-type poly-Si TFT was observed to be decreased due to the drain induced barrier lowering as the channel length decreased. In the n-type poly-Si TFT with a lightly-doped-drain (LDD), the threshold voltage was slightly decreased when a high drain voltage was applied, while the field effect mobility decreased due to the series resistance of the LDD region in the short channel poly-Si TFT. As the temperature increased, the field effect mobility increased about 80% due to the increase of the thermal activated carrier concentration. We have also investigated the degradation of a short channel poly-Si TFT under hot carrier and self-heating stress. After hot carrier stress (V-GS=2V, V-DS=15V), the field effect mobility was considerably decreased up to 20% due to the trap state generation induced by the hot carrier. The subthreshold slope and threshold. voltage were scarcely degraded. After the self-heating stress (V-GS=V-DS=15V), the subthreshold slope, mobility, and threshold voltage were degraded. Transfer characteristics measured at the high drain voltage (V-DS=10V) were shifted to a negative direction because of hole trapping at the backside interface between the polysilicon film and buffer oxide on the glass substrate. (C) 2007 Elsevier B.V All rights reserved.