InGaAsNSb/GaAs quantum wells QWs) have been grown on GaAs (411)A substrates by solid-source molecular beam epitaxy. InGaAsNSb/GaAs QWs on GaAs (411)A exhibited remarkably enhanced photoluminescence efficiency compared with the same structures on conventional GaAs (100) substrates. It was further observed that the optimum growth temperature for (411)A was 30 degrees C higher than that for (100). A model based on the self-assembling of local rough surface domains into a unique global smooth surface at the lowest energy state of the system is proposed to explain the phenomenon. (C) 2007 American Vacuum Society.