The evolution of the morphology of vicinal Si(Ill) surfaces during UHV annealing was followed in details for two types of surface regions: (a) general flat areas of the surface and (b) near the edges of patterned structures such as craters and mesas. The measured surface roughness first increases through an Ostwald ripening process and then approaches that of an atomically flat surface. The morphologies that develop close to the boundaries of etched craters are initially similar to those predicted by the continuum theory of local surface transport, but, as the surface roughness decreases, facets replace the rounded corners. The ridges that develop around isolated craters persist during UHV annealing as long as continuous step flow due to evaporation is taking place. (c) 2007 American Vacuum Society.