Transport properties of field-effect transistors with thin films Of C-76 and its electronic structure

Suglyama H; Nagano T; Nouchi R; Kawasaki N; Ohta Y; Imai K; Tsutsui M; Kubozono Y; Fujiwara A

Chemical Physics Letters, Vol.449, No.1-3, 160-164, 2007

DOI10.1016/j.cplett.2007.10.012 Export Citation

Transport properties of field-effect transistors with thin films Of C-76 and its electronic structure

Suglyama H, Nagano T, Nouchi R, Kawasaki N, Ohta Y, Imai K, Tsutsui M, Kubozono Y, Fujiwara A

The C-76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, P., of 3.9 x 10(-4) CM2 V-1 s(-1), and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C-76 FET followed a thermally-activated hopping transport model. The normally-off like properties Of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.