Thin films were deposited by KrF laser ablation of CrSi2 and beta-FeSi2 targets with the aim to obtain silicide thin films and layers with narrow band gap for sensor applications. The CrSi2-based films exhibit both semiconductor and metal properties, depending on the deposition conditions. Thus, the film of d congruent to 40 nm thick, deposited on Si at 740 K, presents a band gap E-g congruent to 0.18 eV, and large thermo electromotive force (e.m.f.) coefficient alpha congruent to 1.0-1.4 mV/K at 300 <= T <= 340 K and a coefficient of tensosensitivity (R-R-0)/R-0 epsilon congruent to 5. The film with the same thickness, but deposited on SiO2 at 740 K, presents a metal behavior at 125 <= T <= 296 K and a semiconductor one at 77 <= T <= 125 K. Its coefficient alpha varies in the range 5.0-7.5 mu V/K at 300 <= T <= 340 K. The 750 nm thick film deposited on SiO2 at 740 K exhibits only semiconductor behavior in the range 296-77 K with E-g congruent to 0.013 eV and alpha congruent to 10-15 mu V/K at 293 <= T <= 340 K. The coefficient of tensosensitivity for these films is changing in the range 2-5. The beta-FeSi2-based films deposited on SiO2 at 295 <= T <= 740 K show only semiconductor behavior. The thicker the film, the higher E-g: d congruent to 150 nm, E-g congruent to 0.032 eV; d congruent to 70 nm, E-g congruent to 0.027 eV; d congruent to 60 nm, E-g congruent to 0.023 eV. The higher E-g the higher coefficient alpha. The coefficient of tensosensitivity for these films varies in the range 2.3-4.7. The more the semiconductor phase content in the deposited film, the higher are the values of alpha and (R-R-0)/R-0 epsilon. (c) 2007 Elsevier B.V. All rights reserved.