Journal of Crystal Growth, Vol.306, No.1, 16-21, 2007
(InP)(5)/(Ga(0.47)In(0.53)AS)(4) short-period superlattices waveguides for InAs quantum wires lasers
Waveguides formed by (InP)(5)/(Ga0.47In0.53As)(4) short-period superlattices (SPSL) have been grown and characterized for their use as waveguides in InAs self-assembled quantum wires (QWR) lasers. Atomic force microscopy has been used to characterize both the SPSL and the QWR morphology quality. It is demonstrated that the shape of the QWR strongly depends on the roughness of the SPSL surface and that an atomically flat surface is necessary to obtain a uniform QWR size and shape morphology. Photoluminescence (PL) spectroscopy is also employed as a feedback to achieve the optimum growth parameters in order to obtain high-quality QWR confined by SPSL. (c) 2007 Elsevier B.V. All rights reserved.
Keywords:low-dimensional structures;nanostructures;molecular beam epitaxy;superlattices;semiconducting III-V materials;laser diodes