We investigate the effect of thickness of HfO2 and Al2O3 barrier films on the breakdown temperature of Cu/barrier film/Si structures. The HfO2 and Al2O3 films are deposited using tetrakis-diethylamino hafnium and tris-diethylamino aluminum, respectively, as the metal precursors and ozone as the oxidizer at 250 degrees C. Interactions between the layers of Cu/barrier film (1 or 2 nm-thick)/Si structures due to high-temperature annealing in N-2 are probed using sheet resistance measurements. The crystallinity of the multilayer structure and the possible formation of any anneal-induced reaction products are investigated with X-ray diffraction (XRD). The formation of Cu-silicide phase(s) due to diffusion of Cu atoms through the barrier layer indicates the failure of the corresponding diffusion barrier. The surface morphology of Cu is examined using scanning electron microscopy (SEM) and elemental mapping is done with energy dispersive X-ray spectroscopy (EDS). Our results show that both 1 and 2 nm-thick HfO2 and Al2O3 barrier films are capable of restricting the diffusion of Cu at high annealing temperatures; therefore, they could be used as effective diffusion barriers between Cu and Si. (C) 2007 Elsevier B.V. All rights reserved.