Bi1-x-yTixSiyOz (BTSO) films were deposited on sputtered Ru/SiO2/Si substrates by the atomic layer deposition method using tris(1-methoxy-2-methyl-2-propoxy)bismuth, titanium tetraisopropoxide, and tetraethylorthosilicate as Bi, Ti, and Si precursors, respectively, and H2O as an oxidant at temperatures ranging from 225 to 300 degrees C. The film thickness ranged from 13 to 18 nm. The Si contents in the films ranged from 10 to 25 atom % and the dielectric constants ranged from 29 to 43 depending on the Si content. All of the BTSO films had very low carbon contents (< 0.5 atom %), X-ray diffraction showed that the as-grown films were amorphous and, after annealing at 600 degrees C for 30 min the films were crystallized to the pyrochlore structure. (c) 2007 The Electrochemical Society.