In this paper a new method for extraction of the channel length and channel resistance as a function of gate-voltage in MOSFET's is introduced. The method is accurate and calculates the threshold voltages of all devices with different gate-lengths. The channel resistance is divided in two parts; the first part is a function of gate-voltage and threshold voltage difference (V-g - V-t) and the second part is only a function of gate-voltage. Further, the model determines the threshold voltage of short-channel devices independent of their parasitic resistances and implements the channel mobility as an arbitrary function of gate-voltage while the gate-voltage-dependent part of the resistance is uniquely separated from the first part of channel resistance for all devices. (c) 2006 Elsevier Ltd. All rights reserved.