In this paper, an improved method for determining the gate-bias dependent source and drain series resistances R-D and effective channel length L-eff = L-M - Delta L (L-M is the mask channel length and Delta L is the channel length reduction) of advanced MOS devices is developed for the purpose of providing a better accuracy for the modeling of the current voltage characteristics of LED MOSFETs operating from 25 to 120 degrees C. Our results show that both Delta L and R-SD decrease with increasing gate-bias, but increase with increasing temperature. In addition, the gate-bias dependence of Delta L and R-SD becomes weaker as the temperature rises. Experimental data obtained from devices fabricated using the 0.14 and 0.09 mu m DRAM technologies are included in support of the theoretical work developed. (c) 2006 Elsevier Ltd. All rights reserved.