Zinc telluride thin films were deposited by the brush plating technique at a potential of -0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30-90 degrees C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 10(14)-10(15) cm(-3) with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm(2) V-1 s(-1). (c) 2006 Elsevier Ltd. All rights reserved.