A normalized analytical solution for the capacitance associated with a MOSFET surface under non-equilibrium conditions is presented. It is shown that this model can be mapped into an equivalent equilibrium problem with 98% accuracy for near intrinsic samples (U-B congruent to 2). The precision becomes even better for highly doped semiconductors. The physics behind this transformation is explained and nomograms generated to present data in a highly normalized form. (c) 2005 Elsevier Ltd. All rights reserved.