An analytical drain current model is presented for NMOSFETs with pocket implantation. An effective doping concentration derived from the voltage-doping transformation is used to characterize the lateral doping profile of pocket implantation, and subsequently to model the threshold voltage of MOSFETs. Relevant device physics, such as the reverse short-channel effect, velocity saturation, and channel length modification are included in the present model. Moreover a discrete effective electron mobility model extracted from measured data is incorporated to improve the model accuracy. Her-mite interpolation is then applied to describe the drain current behavior in the transition region between the subthreshold and strong inversion regions. Model verifications are carried out using experimental data of MOS devices fabricated from a 0.14-mum DRAM technology. (C) 2003 Elsevier Ltd. All rights reserved.