The characteristics of Sol DTMOS transistors are measured at various temperatures and compared with those of partially depleted Sol MOSFETs. The temperature dependence of threshold voltage and subthreshold characteristics is investigated both theoretically and experimentally. DTMOS devices operating at elevated temperature are shown to have higher drive current and transconductance and a lower temperature dependence of threshold voltage and subthreshold characteristics than partially depleted SOI MOSFETs. (C) 2003 Elsevier Ltd. All rights reserved.