We investigated a photoconductor(PC)/ferroelectric oxide(OF)/semiconductor oxide(SO) POS-FET structure photomemory consisting of organic photoconductor CuPc/inorganic ferroelectric PbZr0.2Ti0.8O3 heterojunction gate and a ferromagnetic oxide semiconductor La0.87Ba0.13MnO3 channel. Visible light information detected by photoconductor CuPc can be memorized in ferroelectric PbZr0.2Ti0.8O3, and non-volatile and non-destructive reading out process of light information memorized in this ferroelectric layer were achieved by reading out the resistance modulation of ferromagnetic semiconductor oxide La0.87Ba0.13MnO3 channel under the photoconductor/ferroelectric gate. (C) 2003 Published by Elsevier Ltd.