Solid-State Electronics, Vol.47, No.10, 1825-1828, 2003
High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.