Solid-State Electronics, Vol.47, No.9, 1565-1568, 2003
High power nitride based light emitting diodes with Ni/ITO p-type contacts
Large size (i.e. 1 mm x 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact. (C) 2003 Elsevier Science Ltd. All rights reserved.
Keywords:InGaN/GaN;multiquantum well;power light emitting diodes;Ni/indium tin oxide;transparent;large area