A new method is presented for predicting the harmonic and intermodulation performance of a SOI FD MOSFET transistor operating, in its triode regime, as a resistor. The results show that, for the same order, the intermodulation product is dominant. This suggests that the use of intermodulation distortion measurement is more informative and relevant than the use of total-harmonic distortion. (C) 2003 Published by Elsevier Science Ltd.