An analytical model to evaluate device's quantum well (QW) properties, current-voltage (I-V) characteristics, small-signal parameters and noise property for InAlAs/InGaAs/InAlAs/InP high electron mobility transistors is presented. A self-consistent solution of Schrodinger and Poisson's equations is used to calculate the QW properties formed in the InGaAs layer (conduction channel) as well as an analytical velocity-electric field (upsilon(d)-E) characteristics to evaluate device's I-V characteristics, small-signal parameters and noise performance. In this paper, the calculation results of device performance for this class of devices are compared with experimental data and the results show good agreement. (C) 2002 Elsevier Science Ltd. All rights reserved.