This note presents a new method that evaluates the location of the maximum value of a given function under the presence of high level of noise. Because the method is based on integration rather than on differentiation, it decreases the effect of noise instead of increasing it. The method's effectiveness is verified by determining the gate voltage corresponding to the maximum slope of simulated and experimental MOSFET transconductance characteristics. (C) 2002 Elsevier Science Ltd. All rights reserved.