Solid-State Electronics, Vol.46, No.11, 1949-1952, 2002
Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source
The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics. (C) 2002 Elsevier Science Ltd. All rights reserved.