화학공학소재연구정보센터
Solid-State Electronics, Vol.46, No.11, 1919-1924, 2002
Influence of the topology on thermal dissipation in high power density GaAs devices
This paper presents an analysis of the influence of the active zone topology on the heat dissipation for GaAs devices. It highlights the influence of the width and the form factor on the thermal behavior of the device. It also shows the sensitivity of the thermal resistance to the increase of the dissipated power. For multi-cellular structures the impact of the thermal coupling between heat sources is studied. (C) 2002 Elsevier Science Ltd. All rights reserved.