Simple techniques are proposed to extract the oxide thickness from C(V) characteristics in the nanometer range. A first comparative method using no fitting parameter allows the oxide thickness extraction by comparison to a reference sample on the same technology. In a second method, the oxide thickness is directly extracted assuming one parameter (associated to the carrier statistics). Both techniques are experimentally and theoretically justified. They open new perspectives to statistical oxide thickness measurements. (C) 2002 Published by Elsevier Science Ltd.