Conventionally, the cross-bridge Kelvin resistor (CKR) is used for measurements of specific contact resistivity between metal and silicon. However, this method involves unavoidable measurement errors. They are induced by alignment margins of silicon active layers around contact holes. For the purpose of discussing their physical meanings. a transmission line model approximation and physical considerations are employed. Using the results of these considerations. a new method to avoid measurement errors is proposed. The results measured by using the conventional CKR method and the new method are compared, It is shown that the new method gives physically reasonable results. (C) 2002 Elsevier Science Ltd, All rights reserved.