Spin-dependent transport properties are already applied in hard disks. read heads. sensors and metallic magnetic andom access memories. Large efforts currently concentrate on new spin-dependent functionalities using either metallic or tunnelling devices, Here,we show the possibility to realize field programmable spin-logic gates, For this purpose, we experimentally demonstrate the feasibility of a two Input spin-logic Late. based on spin-dependent tunnelling elements, which call be separately programmed on-chip to form a logic NOR or a NAND function. Key factors in the spin-logic gate functionality, and performance are identified from the measurements and are discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.