Solid-State Electronics, Vol.46, No.4, 477-480, 2002
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
In this letter, high-quality indium zinc oxide (IZO) films (60-220 nm) were first grown on hardness poly-carbonate substrate by ion-assisted deposition (IAD) dc magnetron sputtering without a post deposition annealing treatment. The electrical, optical, and structural properties of these films were investigated as a function of film thickness. IAD dc magnetron sputtering provides very uniform IZO films with high transparency ( greater than or equal to 85% in 550 nm spectrum) and low electrical resistivity (3 x 10(-4) Omegacm). The Hall mobility and carrier density for a 120-nm-thick film at 100 W are 12 cm(2)/ Vs and 2.5 x 10(21) cm(-3), respectively. The IZO films grown at low temperature by IAD dc magnetron sputtering were used for the organic light-emitting devices (OLEDs) as transparent anode. Under a current density of 100 mA/cm(2), the developed OLEDs show an excellent efficiency (12 V turn-on voltage) and a luminance of 1200 cd/m(2) in average, which is better than that measured with commercial ITO anodes and suitable for the electro-optical application. (C) 2002 Elsevier Science Ltd. All rights reserved.
Keywords:ion-assisted deposition;indium zinc oxide;hardness poly-carbonate substrate;electroluminescence performance;organic light-emitting devices