In this paper, we present a new behavioral model valid for insulated gate bipolar transistors (IGBTs). The d.c. part of the model is based on an empirical formula for the IGBT and needs three data points on the I-V curves to generate the entire d.c. characteristics. The dynamic part of the model is based on a Hammerstein-like current source. A template written in the MAST language is created in Saber simulator based on this new model. The theoretical predictions of the model are compared with the experimental data available for IGBTs fabricated by various manufacturers and found to be in excellent agreement. Furthermore, the new model is consistently faster than the existing physical models in simulating various circuit topologies.