화학공학소재연구정보센터
Solid-State Electronics, Vol.45, No.7, 1115-1119, 2001
Effect of temperature dependence of band gap and device constant on I-V characteristics of junction diode
A new expression for the I-V characteristics of junction diode is proposed considering the temperature dependence of band gap and device constant. Experimental verification of the proposed theory has been done with silicon diode, yellow LED and green LED. It has been shown that theoretically estimated forward voltage across a junction diode can be predicted within 5% with the experimentally obtained forward voltages at different temperatures (-30 degreesC to 70 degreesC).