화학공학소재연구정보센터
Solid-State Electronics, Vol.45, No.3, 441-446, 2001
Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photodiode structures
The optimum geometry of an interdigitated Schottky barrier metal-semiconductor-metal photodetector (MSM-PD) is discussed. From the calculated MSM-PD capacitance and transit time of optically generated carriers, the response time and quantum efficiency are evaluated and analysed. We propose a simple scaling rule to achieve the best highspeed response of the MSM detector. The optimum interelectrode spacing for interdigitated MSM-PD has been established The potential of different semiconductor materials for high-speed MSM detectors is examined.